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Infineon FP10R12W1T4
Manufacturer Part #:
FP10R12W1T4
Manufacturer:
Package/Case:
Through Hole,62.8x33.8mm
Datasheet:
Description:
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | IGBT Modules | |
| Manufacturer | Infineon | |
| Package/Case | Through Hole,62.8x33.8mm | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Td(off) | 180ns | |
| Reverse Transfer Capacitance (Cres) | 0.024nF | |
| Td(on) | 45ns | |
| Pulsed Current- Forward(Ifm) | 300A | |
| Vce Saturation(VCE(sat)) | 2.25V@10A,15V | |
| Input Capacitance(Cies) | 600pF | |
| Current - Collector(Ic) | 20A | |
| Switching Energy(Eoff) | 550uJ | |
| Pd - Power Dissipation | 105W | |
| Operating Temperature | -40℃~+150℃ | |
| Turn-On Energy (Eon) | 900uJ | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.2V@0.3mA |
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