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Huixin H6B65M
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single IGBTs | |
| Manufacturer | Huixin | |
| Package/Case | TO-252 | |
| Td(off) | 39ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Td(on) | 6ns | |
| Reverse Transfer Capacitance (Cres) | 22pF | |
| Output Capacitance(Coes) | 36pF | |
| Input Capacitance(Cies) | 243pF | |
| Switching Energy(Eoff) | 130uJ | |
| Turn-On Energy (Eon) | 90uJ | |
| Pd - Power Dissipation | 69W | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.3V@1mA |
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