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R+O HV10N1H6S
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single FETs, MOSFETs | |
| Manufacturer | R+O | |
| Package/Case | SOT-89 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature - | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Number | 1 N-channel | |
| RDS(on) | 160mΩ@10V | |
| Gate Charge(Qg) | 20nC@10V | |
| Ciss-Input Capacitance | 650pF | |
| Pd - Power Dissipation | 1.5W |
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