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HUAYI HYG018N10NS1B6
Manufacturer Part #:
HYG018N10NS1B6
Manufacturer:
Package/Case:
TO-263-6
Datasheet:
Description:
Loading…Specifications
| Type | Description | Select |
|---|---|---|
| Category | Single FETs, MOSFETs | |
| Manufacturer | HUAYI | |
| Package/Case | TO-263-6 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature - | -55℃~+175℃ | |
| Current - Continuous Drain(Id) | 322A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 208pF | |
| Type | N-Channel | |
| Number | 1 N-channel | |
| Output Capacitance(Coss) | 5.45nF | |
| RDS(on) | 1.7mΩ@10V | |
| Gate Charge(Qg) | 205nC@10V | |
| Ciss-Input Capacitance | 12.57nF | |
| Pd - Power Dissipation | 375W |
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