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BSC091N03MSCGATMA1
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Infineon Technologies BSC091N03MSCGATMA1
Manufacturer Part #:
BSC091N03MSCGATMA1
Manufacturer:
Infineon Technologies
Package/Case:
PG-TDSON-8-6
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 1
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Specifications
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Infineon Technologies |
| Package/Case | PG-TDSON-8-6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 9.1mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-6 |
| Drain to Source Voltage (Vdss) | 30 V |
| Series | SIPMOS® |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Package / Case | 8-PowerTDFN |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 44A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Bulk |