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G2R50MT33K
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GeneSiC Semiconductor G2R50MT33K
Manufacturer Part #:
G2R50MT33K
Manufacturer:
GeneSiC Semiconductor
Package/Case:
TO-247-4
Datasheet:
Description:
3300V 50M TO-247-4 SIC MOSFET
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Specifications
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | GeneSiC Semiconductor |
| Package/Case | TO-247-4 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 7301 pF @ 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 340 nC @ 20 V |
| Mounting Type | Through Hole |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
| Vgs(th) (Max) @ Id | 3.5V @ 10mA (Typ) |
| Supplier Device Package | TO-247-4 |
| Drain to Source Voltage (Vdss) | 3300 V |
| Series | G2R™ |
| Power Dissipation (Max) | 536W (Tc) |
| Package / Case | TO-247-4 |
| Technology | SiCFET (Silicon Carbide) |
| Mfr | GeneSiC Semiconductor |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Vgs (Max) | +25V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Package | Tube |