GeneSiC Semiconductor G3R350MT12J

Manufacturer Part #:

G3R350MT12J

Manufacturer:

GeneSiC Semiconductor

Package/Case:

TO-263-7

Datasheet:

Description:

SIC MOSFET N-CH 11A TO263-7

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Specifications

Type	Description
Category	Single FETs, MOSFETs
Manufacturer	GeneSiC Semiconductor
Package/Case	TO-263-7
Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	334 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 15 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id	2.69V @ 2mA
Supplier Device Package	TO-263-7
Drain to Source Voltage (Vdss)	1200 V
Series	G3R™
Power Dissipation (Max)	75W (Tc)
Package / Case	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology	SiCFET (Silicon Carbide)
Mfr	GeneSiC Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±15V
Drive Voltage (Max Rds On, Min Rds On)	15V
Package	Tube
Base Product Number	G3R350