Global Power Technology-GPT G4S06515DT

Manufacturer Part #:

G4S06515DT

Manufacturer:

Global Power Technology-GPT

Package/Case:

TO-263

Datasheet:

Description:

DIODE SIL CARBIDE 650V 38A TO263

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Specifications

Type	Description
Category	Single Diodes
Manufacturer	Global Power Technology-GPT
Package/Case	TO-263
Speed	No Recovery Time > 500mA (Io)
Capacitance @ Vr, F	645pF @ 0V, 1MHz
Reverse Recovery Time (trr)	0 ns
Mounting Type	Surface Mount
Product Status	Active
Supplier Device Package	TO-263
Current - Reverse Leakage @ Vr	50 µA @ 650 V
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	SiC (Silicon Carbide) Schottky
Voltage - Forward (Vf) (Max) @ If	1.7 V @ 15 A
Mfr	Global Power Technology-GPT
Voltage - DC Reverse (Vr) (Max)	650 V
Package	Cut Tape (CT)
Current - Average Rectified (Io)	38A
Operating Temperature - Junction	-55°C ~ 175°C