Goford Semiconductor G58N06F

Manufacturer Part #:

G58N06F

Manufacturer:

Goford Semiconductor

Package/Case:

TO-220F

Datasheet:

Description:

N60V, 35A,RD<13M@10V,VTH1.0V~2.4

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Specifications

Type	Description
Category	Single FETs, MOSFETs
Manufacturer	Goford Semiconductor
Package/Case	TO-220F
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	30006 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	75 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	13mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	TO-220F
Drain to Source Voltage (Vdss)	60 V
Series	G
Power Dissipation (Max)	44W (Tc)
Package / Case	TO-220-3 Full Pack
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tube