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G5S06508DT
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Global Power Technology-GPT G5S06508DT
Manufacturer Part #:
G5S06508DT
Manufacturer:
Global Power Technology-GPT
Package/Case:
TO-263
Datasheet:
Description:
DIODE SIL CARBIDE 650V 32A TO263
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Specifications
| Type | Description |
|---|---|
| Category | Single Diodes |
| Manufacturer | Global Power Technology-GPT |
| Package/Case | TO-263 |
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | TO-263 |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Cut Tape (CT) |
| Current - Average Rectified (Io) | 32A |
| Operating Temperature - Junction | -55°C ~ 175°C |