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G5S06508QT
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Global Power Technology-GPT G5S06508QT
Manufacturer Part #:
G5S06508QT
Manufacturer:
Global Power Technology-GPT
Package/Case:
4-DFN (8x8)
Datasheet:
Description:
DIODE SIL CARB 650V 44.9A 4DFN
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Specifications
| Type | Description |
|---|---|
| Category | Single Diodes |
| Manufacturer | Global Power Technology-GPT |
| Package/Case | 4-DFN (8x8) |
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 550pF @ 0V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | 4-DFN (8x8) |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Series | - |
| Package / Case | 4-PowerTSFN |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 8 A |
| Mfr | Global Power Technology-GPT |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Cut Tape (CT) |
| Current - Average Rectified (Io) | 44.9A |
| Operating Temperature - Junction | -55°C ~ 175°C |