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IPT020N10N3ATMA1
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Infineon Technologies IPT020N10N3ATMA1
Manufacturer Part #:
IPT020N10N3ATMA1
Manufacturer:
Infineon Technologies
Package/Case:
PG-HSOF-8-1
Datasheet:
-
Description:
MOSFET N-CH 100V 300A 8HSOF
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Specifications
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | Infineon Technologies |
| Package/Case | PG-HSOF-8-1 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 11200 pF @ 50 V |
| Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Not For New Designs |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 272µA |
| Supplier Device Package | PG-HSOF-8-1 |
| Drain to Source Voltage (Vdss) | 100 V |
| Series | OptiMOS™ |
| Power Dissipation (Max) | 375W (Tc) |
| Package / Case | 8-PowerSFN |
| Technology | MOSFET (Metal Oxide) |
| Mfr | Infineon Technologies |
| Current - Continuous Drain (Id) @ 25°C | 300A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPT020 |