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MBR40035CTR
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GeneSiC Semiconductor MBR40035CTR
Manufacturer Part #:
MBR40035CTR
Manufacturer:
GeneSiC Semiconductor
Package/Case:
Twin Tower
Datasheet:
Description:
DIODE MODULE 35V 200A 2TOWER
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Specifications
| Type | Description |
|---|---|
| Category | Diode Arrays |
| Manufacturer | GeneSiC Semiconductor |
| Package/Case | Twin Tower |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Chassis Mount |
| Product Status | Active |
| Supplier Device Package | Twin Tower |
| Current - Reverse Leakage @ Vr | 1 mA @ 35 V |
| Series | - |
| Package / Case | Twin Tower |
| Technology | Schottky, Reverse Polarity |
| Diode Configuration | 1 Pair Common Anode |
| Voltage - Forward (Vf) (Max) @ If | 700 mV @ 200 A |
| Mfr | GeneSiC Semiconductor |
| Voltage - DC Reverse (Vr) (Max) | 35 V |
| Package | Bulk |
| Current - Average Rectified (Io) (per Diode) | 200A |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | MBR40035 |