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NSVB123JPDXV6T1G
Image is for reference only.
onsemi NSVB123JPDXV6T1G
Manufacturer Part #:
NSVB123JPDXV6T1G
Manufacturer:
onsemi
Package/Case:
SOT-563
Datasheet:
Description:
TRANS PREBIAS NPN/PNP SOT563
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Specifications
| Type | Description |
|---|---|
| Category | Bipolar Transistor Arrays, Pre-Biased |
| Manufacturer | onsemi |
| Package/Case | SOT-563 |
| Frequency - Transition | - |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 2.2kOhms |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | SOT-563 |
| Series | - |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Package / Case | SOT-563, SOT-666 |
| Power - Max | 500mW |
| Mfr | onsemi |
| Resistor - Emitter Base (R2) | 4.7kOhms |
| Current - Collector Cutoff (Max) | 500nA |
| Package | Tape & Reel (TR) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Base Product Number | NSVB12 |