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NTD5862NT4G
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onsemi NTD5862NT4G
Manufacturer Part #:
NTD5862NT4G
Manufacturer:
onsemi
Package/Case:
DPAK
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR, 9
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Specifications
| Type | Description |
|---|---|
| Category | Single FETs, MOSFETs |
| Manufacturer | onsemi |
| Package/Case | DPAK |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 6000 pF @ 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 82 nC @ 10 V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 45A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drain to Source Voltage (Vdss) | 60 V |
| Series | - |
| Power Dissipation (Max) | 115W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 98A (Tc) |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |