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NVJD4152PT1G
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onsemi NVJD4152PT1G
Manufacturer Part #:
NVJD4152PT1G
Manufacturer:
onsemi
Package/Case:
SC-88/SC70-6/SOT-363
Datasheet:
-
Description:
NVJD4152 - Dual P-Channel Trench
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Specifications
| Type | Description |
|---|---|
| Category | FET, MOSFET Arrays |
| Manufacturer | onsemi |
| Package/Case | SC-88/SC70-6/SOT-363 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Configuration | 2 P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 155pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 2.2nC @ 4.5V |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 880mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Drain to Source Voltage (Vdss) | 20V |
| Series | Automotive, AEC-Q101 |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 272mW (Ta) |
| Mfr | onsemi |
| Current - Continuous Drain (Id) @ 25°C | 880mA (Ta) |
| Package | Bulk |