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PDTB114ETR
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NXP Semiconductors PDTB114ETR
Manufacturer Part #:
PDTB114ETR
Manufacturer:
NXP Semiconductors
Package/Case:
TO-236AB
Datasheet:
Description:
PDTB114ET - 500 MA, 50 V PNP RES
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Specifications
| Type | Description |
|---|---|
| Category | Single, Pre-Biased Bipolar Transistors |
| Manufacturer | NXP Semiconductors |
| Package/Case | TO-236AB |
| Frequency - Transition | 140 MHz |
| Current - Collector (Ic) (Max) | 500 mA |
| Resistor - Base (R1) | 10 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Mounting Type | Surface Mount |
| Product Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Supplier Device Package | TO-236AB |
| Series | - |
| Transistor Type | PNP - Pre-Biased |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 320 mW |
| Mfr | NXP Semiconductors |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Current - Collector Cutoff (Max) | 500nA |
| Package | Bulk |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 50mA, 5V |
| Base Product Number | PDTB114 |