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PDTC115EMB,315
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NXP Semiconductors PDTC115EMB,315
Manufacturer Part #:
PDTC115EMB,315
Manufacturer:
NXP Semiconductors
Package/Case:
DFN1006B-3
Datasheet:
Description:
PDTC115E - NPN RESISTOR-EQUIPPED
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Specifications
| Type | Description |
|---|---|
| Category | Single, Pre-Biased Bipolar Transistors |
| Manufacturer | NXP Semiconductors |
| Package/Case | DFN1006B-3 |
| Frequency - Transition | 230 MHz |
| Current - Collector (Ic) (Max) | 20 mA |
| Resistor - Base (R1) | 100 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 250µA, 5mA |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Supplier Device Package | DFN1006B-3 |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | SC-101, SOT-883 |
| Power - Max | 250 mW |
| Mfr | NXP Semiconductors |
| Resistor - Emitter Base (R2) | 100 kOhms |
| Current - Collector Cutoff (Max) | 1µA |
| Package | Bulk |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 5V |
| Base Product Number | PDTC115 |