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PDTC123EMB,315
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NXP Semiconductors PDTC123EMB,315
Manufacturer Part #:
PDTC123EMB,315
Manufacturer:
NXP Semiconductors
Package/Case:
DFN1006B-3
Datasheet:
Description:
NOW NEXPERIA PDTC123EMB - SMALL
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Specifications
| Type | Description |
|---|---|
| Category | Single, Pre-Biased Bipolar Transistors |
| Manufacturer | NXP Semiconductors |
| Package/Case | DFN1006B-3 |
| Frequency - Transition | 230 MHz |
| Current - Collector (Ic) (Max) | 100 mA |
| Resistor - Base (R1) | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Supplier Device Package | DFN1006B-3 |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | 3-XFDFN |
| Power - Max | 250 mW |
| Mfr | NXP Semiconductors |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Current - Collector Cutoff (Max) | 1µA |
| Package | Bulk |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
| Base Product Number | PDTC123 |