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PDTD123ET,215
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NXP Semiconductors PDTD123ET,215
Manufacturer Part #:
PDTD123ET,215
Manufacturer:
NXP Semiconductors
Package/Case:
TO-236AB
Datasheet:
-
Description:
SMALL SIGNAL BIPOLAR TRANSISTOR,
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Specifications
| Type | Description |
|---|---|
| Category | Single, Pre-Biased Bipolar Transistors |
| Manufacturer | NXP Semiconductors |
| Package/Case | TO-236AB |
| Current - Collector (Ic) (Max) | 500 mA |
| Resistor - Base (R1) | 2.2 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Supplier Device Package | TO-236AB |
| Series | PDTD123E |
| Transistor Type | NPN - Pre-Biased |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Power - Max | 250 mW |
| Mfr | NXP Semiconductors |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
| Current - Collector Cutoff (Max) | 500nA |
| Package | Bulk |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |