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PQMH9Z
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NXP Semiconductors PQMH9Z
Manufacturer Part #:
PQMH9Z
Manufacturer:
NXP Semiconductors
Package/Case:
DFN1010B-6
Datasheet:
-
Description:
Digital BJT 2 NPN - Pre-Biased (
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Specifications
| Type | Description |
|---|---|
| Category | Bipolar Transistor Arrays, Pre-Biased |
| Manufacturer | NXP Semiconductors |
| Package/Case | DFN1010B-6 |
| Frequency - Transition | 230MHz |
| Current - Collector (Ic) (Max) | 100mA |
| Resistor - Base (R1) | 10kOhms |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Supplier Device Package | DFN1010B-6 |
| Series | Automotive, AEC-Q101 |
| Transistor Type | 2 NPN - Pre-Biased |
| Package / Case | 6-XFDFN Exposed Pad |
| Power - Max | 230mW |
| Mfr | NXP Semiconductors |
| Resistor - Emitter Base (R2) | 47kOhms |
| Current - Collector Cutoff (Max) | 1µA |
| Package | Bulk |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 5mA, 5V |