NXP Semiconductors PSMN2R0-60ES,127

Manufacturer Part #:

PSMN2R0-60ES,127

Manufacturer:

NXP Semiconductors

Package/Case:

I2PAK

Datasheet:

Description:

NEXPERIA PSMN2R0-60ES - 120A, 60

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Specifications

Type	Description
Category	Single FETs, MOSFETs
Manufacturer	NXP Semiconductors
Package/Case	I2PAK
Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9997 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Mounting Type	Through Hole
Product Status	Active
Rds On (Max) @ Id, Vgs	2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	60 V
Series	-
Power Dissipation (Max)	338W (Tc)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP Semiconductors
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	PSMN2R0