Vishay SI2319DDS-T1-GE3

Manufacturer Part #:

SI2319DDS-T1-GE3

Manufacturer:

Vishay

Package/Case:

SOT-23-3 (TO-236)

Datasheet:

Description:

MOSFET P-CH 40V 2.7A/3.6A SOT23

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Specifications

Type	Description
Category	Single FETs, MOSFETs
Manufacturer	Vishay
Package/Case	SOT-23-3 (TO-236)
Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	650 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Mounting Type	Surface Mount
Product Status	Active
Rds On (Max) @ Id, Vgs	75mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	40 V
Series	TrenchFET® Gen III
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta), 3.6A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SI2319