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TRS20N65FB,S1F(S
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Toshiba Semiconductor and Storage TRS20N65FB,S1F(S
Manufacturer Part #:
TRS20N65FB,S1F(S
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
TO-247
Datasheet:
-
Description:
DODE SCHOTTKY 650V TO247
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Specifications
| Type | Description |
|---|---|
| Category | Diode Arrays |
| Manufacturer | Toshiba Semiconductor and Storage |
| Package/Case | TO-247 |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-247 |
| Current - Reverse Leakage @ Vr | 90 µA @ 650 V |
| Series | - |
| Package / Case | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Mfr | Toshiba Semiconductor and Storage |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | TRS20N65 |