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TRS8A65F,S1Q
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Toshiba Semiconductor and Storage TRS8A65F,S1Q
Manufacturer Part #:
TRS8A65F,S1Q
Manufacturer:
Toshiba Semiconductor and Storage
Package/Case:
TO-220F-2L
Datasheet:
-
Description:
DIODE SIL CARBIDE 650V 8A TO220F
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Specifications
| Type | Description |
|---|---|
| Category | Single Diodes |
| Manufacturer | Toshiba Semiconductor and Storage |
| Package/Case | TO-220F-2L |
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 28pF @ 650V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Through Hole |
| Product Status | Active |
| Supplier Device Package | TO-220F-2L |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Series | - |
| Package / Case | TO-220-2 Full Pack |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 8 A |
| Mfr | Toshiba Semiconductor and Storage |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tube |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | 175°C (Max) |
| Base Product Number | TRS8A65 |