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WNSC2D08650TJ
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WeEn Semiconductors WNSC2D08650TJ
Manufacturer Part #:
WNSC2D08650TJ
Manufacturer:
WeEn Semiconductors
Package/Case:
5-DFN (8x8)
Datasheet:
Description:
DIODE SIL CARBIDE 650V 8A 5DFN
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Specifications
| Type | Description |
|---|---|
| Category | Single Diodes |
| Manufacturer | WeEn Semiconductors |
| Package/Case | 5-DFN (8x8) |
| Speed | No Recovery Time > 500mA (Io) |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Mounting Type | Surface Mount |
| Product Status | Active |
| Supplier Device Package | 5-DFN (8x8) |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Series | - |
| Package / Case | 4-VSFN Exposed Pad |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Mfr | WeEn Semiconductors |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Package | Tape & Reel (TR) |
| Current - Average Rectified (Io) | 8A |
| Operating Temperature - Junction | 175°C |
| Base Product Number | WNSC2 |